IPB13N03LB opti mos ? 2 power-transistor features ? ideal for high-frequency dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel - logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? superior thermal resistance ? 175 c operating temperature ? d v /d t rated ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 2) 30 a t c =100 c 30 pulsed drain current i d,pulse t c =25 c 3) 120 avalanche energy, single pulse e as i d =30 a, r gs =25 ? 64 mj reverse diode d v /d t d v /d t i d =30 a, v ds =20 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 52 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 1) j-std20 and jesd22 value v ds 30 v r ds(on),max 12.5 m ? i d 30 a product summary pg-to263-3 type package marking IPB13N03LB p-to263-3 13n03lb rev. 0.93 page 1 2006-05-10
IPB13N03LB parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.9 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =20 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =20 a - 14.9 18.6 m ? v gs =10 v, i d =30 a - 10.4 12.5 gate resistance r g - 1.2 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 42 - s 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 2) current is limited by bondwire; with an r thjc =2.9 k/w the chip is able to carry 48 a. 3) see figure 3 4) t j,max =150 c and duty cycle d <0.25 for v gs <-5 v rev. 0.93 page 2 2006-05-10
IPB13N03LB parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1019 1355 pf output capacitance c oss - 364 485 reverse transfer capacitance c rss -4974 turn-on delay time t d(on) -47ns rise time t r -46 turn-off delay time t d(off) -1623 fall time t f - 2.8 4.2 gate char g e characteristics 6) gate to source charge q gs - 3.6 4.8 nc gate charge at threshold q g(th) - 1.6 2.2 gate to drain charge q gd - 2.2 3.4 switching charge q sw - 4.2 6 gate charge total q g -811 gate plateau voltage v plateau - 3.5 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 5 v -79nc output charge q oss v dd =15 v, v gs =0 v -811 reverse diode diode continous forward current i s - - 30 a diode pulse current i s,pulse - - 120 diode forward voltage v sd v gs =0 v, i f =30 a, t j =25 c - 0.95 1.2 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 10 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =25 a, r g =2.7 ? v dd =15 v, i d =25 a, v gs =0 to 5 v rev. 0.93 page 3 2006-05-10
IPB13N03LB 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.01 0.1 1 10 0 0 0 0 0 0 1 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 0 50 100 150 200 t c [c] i d [a] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 rev. 0.93 page 4 2006-05-10
IPB13N03LB 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2v 3.5 v 3.8 v 4.1 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 0 20406080100 i d [a] r ds(on) [m ? ] 25 c 175 c 0 10 20 30 40 50 60 70 80 90 100 012345 v gs [v] i d [a] 0 10 20 30 40 50 60 70 0 20406080 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.5 v 3.8 v 4.1 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 90 100 0123 v ds [v] i d [a] rev. 0.93 page 5 2006-05-10
IPB13N03LB 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 12 14 16 18 20 22 24 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 20 a 200 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 100 1000 10000 0 5 10 15 20 25 30 v ds [v] c [pf] 25 c 175 c 25c 98% 175c 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 0.93 page 6 2006-05-10
IPB13N03LB 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =25 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 5 v 15 v 20 v 0 2 4 6 8 10 12 01020 q gate [nc] v gs [v] 20 22 24 26 28 30 32 34 36 38 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i av [a] rev. 0.93 page 7 2006-05-10
IPB13N03LB pg-to263-3: outline packaging: rev. 0.93 page 8 2006-05-10
IPB13N03LB published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. all rights reserved. attention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 0.93 page 9 2006-05-10
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